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IRF7604
1200
1000
V GS
C iss
C rss
C oss
=
=
=
=
0V , f = 1M H z
C gs + C gd , C ds S H O R TE D
C gd
C ds +C gd
10
8
I D = -2.4A
V D S = -16V
C is s
800
C os s
6
600
4
400
200
C rs s
2
FO R TE S T C IR C U IT
0
1
10
100
A
0
0
4
8
S E E FIG U R E 9
12 16
20
A
100
-V D S , D rain-to-S ource V oltage (V )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
Q G , Total G ate C harge (nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R D S (on)
10
10
100μ s
T J = 150°C
1m s
1
T J = 25°C
1
10m s
T J
0.1
V G S = 0V
A
0.1
T A = 25°C
= 150°C
S ingle P ulse
A
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
-V S D , S ource-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
-V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
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